MCP6V51-ESLASHMS datasheet(3/43 Pages) MICROCHIP

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 2018 Microchip Technology Inc.

DS20006136A-page 3

MCP6V51

1.0

ELECTRICAL CHARACTERISTICS

1.1

Absolute Maximum Ratings †

VDD -VSS ................................................................................................................................................................49.5V

Current at Input Pins ............................................................................................................................................±10 mA

Analog Inputs (VIN+ and VIN-) (Note 1)..................................................................................... VSS - 1.0V to VDD +1.0V

All Other Inputs and Outputs .................................................................................................... VSS - 0.3V to VDD +0.3V

Difference Input Voltage .............................................................................................................................................±1V

Output Short Circuit Current ........................................................................................................................... Continuous

Current at Output and Supply Pins ......................................................................................................................±50 mA

Storage Temperature .............................................................................................................................-65°C to +150°C

Maximum Junction Temperature .......................................................................................................................... +150°C

ESD protection on all pins (HBM, CDM, MM)

  2 kV, 750V, 200V

Note 1: See Section 4.2.1, Input Protection.

1.2

Electrical Specifications

†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +4.5V to +45V, VSS = GND,

VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =10kΩ to VL and CL = 100 pF (refer to Figure 1-4 and Figure 1-5).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Offset

Input Offset Voltage

VOS

-15

±2.4

+15

µV

TA =+25°C

Input Offset Voltage Drift with

Temperature (Linear Temp. Co.)

TC1

-31

±5

+31

nV/°C TA = -40 to +125°C,

VDD =4.5V (Note 1)

TC1

-36

±7

+36

nV/°C TA = -40 to +125°C,

VDD = 45V

(Note 1)

Input Offset Voltage Quadratic

Temp. Co.

TC2

—±42

—

nV/

°C2

TA = -40 to +125°C

VDD =4.5V

TC2

—±38

—

nV/

°C2

TA = -40 to +125°C

VDD = 45V

Input Offset Voltage Aging

∆VOS

—

±2

—

µV

408 hours Life Test at

+150°C,

measured at +25°C

Power Supply Rejection Ratio

PSRR

134

160

—

124

138

—

TA = -40°C to +125°C

VDD = 45V (Note 1)

Input Bias Current and Impedance

Input Bias Current

-250

±60

+250

VDD = 45V

Note 1:

Not production tested. Limits set by characterization and/or simulation and provided as design guidance

only.

Figure 2-17 shows how VCML and VCMH changed across temperature for the first production lot.

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