MCP6V51-ESLASHMS datasheet(6/43 Pages) MICROCHIP

6 / 43 page

MCP6V51

DS20006136A-page 6

 2018 Microchip Technology Inc.

Output Overdrive Recovery Time

tODR

—

µs

G = -10, ±0.5V input overdrive to VDD/2,

VIN 50% point to VOUT 90% point (Note 2)

EMI Protection

EMI Rejection Ratio

EMIRR

—

VIN =0.1 VPK, f = 400 MHz, VDD = 45V

—95

—

VIN =0.1 VPK, f = 900 MHz, VDD = 45V

—108

—

VIN =0.1 VPK, f = 1800 MHz, VDD =45V

—109

—

VIN =0.1 VPK, f = 2400 MHz, VDD =45V

—109

—

VIN =0.1 VPK, f = 5600 MHz, VDD =45V

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +4.5V to +45V, VSS = GND.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Operating Temperature Range

-40

—

+125

°C

(Note 1)

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 8LD-MSOP

JA

—206

—

°C/W

Thermal Resistance, 5LD-SOT-23

JA

—115

—

°C/W

Note 1:

Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).

AC ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +4.5V to +45V, VSS = GND,

VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =10kΩ to VL and CL = 100 pF (refer to Figure 1-4 and Figure 1-5).

Parameters

Sym.

Min.

Typ. Max.

Units

Conditions

Note 1:

Behavior may vary with different gains; see Section 4.3.3 “Offset at Power-Up”.

tSTL and tODR include some uncertainty due to clock edge timing.

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