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AT25DF512C 데이터시트(PDF) 30 Page - Dialog Semiconductor |
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AT25DF512C 데이터시트(HTML) 30 Page - Dialog Semiconductor |
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30 / 43 page ![]() 29 AT25DF512C DS-25DF512C–030E–2/2017 13. Electrical Specifications 13.3 DC Characteristics Typical values measured at 3.0V @ 25°C for the 2.3V to 3.6V range. 13.1 Absolute Maximum Ratings* Temperature under Bias. . . . . . . . -55 °C to +125°C *Notice: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Storage Temperature . . . . . . . . . . -65 °C to +150°C All Input Voltages (including NC Pins) with Respect to Ground . . . . . . . . . .-0.6V to +4.1V All Output Voltages with Respect to Ground . . . . . .-0.6V to VCC + 0.5V 13.2 DC and AC Operating Range AT25DF512C Operating Temperature (Case) (1) Ind. -40 °C to 85°C VCC Power Supply 1.65V to 3.6V 1. Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V) Symbol Parameter Condition 1.65V to 3.6V 2.3V to 3.6V Units Min Typ Max Min Typ Max IUDPD Ultra-Deep Power- Down Current CS = VCC. All other inputs at 0V or VCC 0.2 1 0.3 1 µA IDPD (1) Deep Power-Down Current CS = VCC. All other inputs at 0V or VCC 5 15 8.5 15 µA ISB Standby Current CS = VCC. All other inputs at 0V or VCC 25 40 25 40 µA ICC1 (2) (3) Active Current, Low Power Read (03h, 0Bh) Operation f = 1MHz; IOUT = 0mA 4.5 9 5.5 9 mA f = 20MHz; IOUT = 0mA 4.5 9 5.5 9 mA ICC2 (2)(3) Active Current, Read Operation f = 50MHz; IOUT = 0mA 5 10 6 10 mA f = 85MHz; IOUT = 0mA 5 10 6 10 mA ICC3(2)(3) Active Current, Program Operation CS = VCC 12 16 12 16 mA |
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