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AT25DF512C 데이터시트(PDF) 33 Page - Dialog Semiconductor |
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AT25DF512C 데이터시트(HTML) 33 Page - Dialog Semiconductor |
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33 / 43 page ![]() 32 AT25DF512C DS-25DF512C–030E–2/2017 Note: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles. 2. Not 100% tested (value guaranteed by design and characterization). 3. Program and Erase operations characterized at -10°C to +85°C. Program and Erase operations at -40°C to -10°C require a minimum of 1.7V. tCHPE (1)(2) Chip Erase Time 700 1150 600 800 ms tOTPP(1) OTP Security Register Program Time 400 950 400 950 µs tWRSR(2) Write Status Register Time 20 40 20 40 ms 13.6 Program and Erase Characteristics Symbol Parameter 1.65V-3.6V(3) 2.3V-3.6V Min Typ Max Min Typ Max Units |
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