AT25PE20 datasheet(35/64 Pages) DIALOG

35 / 64 page

AT25PE20

DS-25PE20–139C–8/2018

14.

Operation Mode Summary

The commands described previously can be grouped into four different categories to better describe which commands

can be executed at what times.

Group A commands consist of:

Main Memory Page Read

Continuous Array Read (SPI)

Read Sector Protection Register

Read Security Register

Buffer Read

Group B commands consist of:

Page Erase

Block Erase

Sector Erase

Chip Erase

Main Memory Page to the Buffer Transfer

Main Memory Page to the Buffer Compare

Buffer to Main Memory Page Program with Built-In Erase

Buffer to Main Memory Page Program without Built-In Erase

Main Memory Page Program through the Buffer with Built-In Erase

10. Main Memory Byte/Page Program through Buffer without Built-In Erase

11. Auto Page Rewrite

12. Read-Modify-Write

Group C commands consist of:

Buffer Write

Status Register Read

Manufacturer and Device ID Read

Group D commands consist of:

Erase Sector Protection Register

Program Sector Protection Register

Buffer and Page Size Configuration

If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be

started. However, during the internally self-timed portion of Group B commands, any command in Group C can be

executed. The Group B commands using the Buffer should use Group C commands. Finally, during the internally

self-timed portion of a Group D command, only the Status Register Read command should be executed.

AT25PE20 데이터시트(PDF) 35 Page - Dialog Semiconductor