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AT25SL641 데이터시트(PDF) 64 Page - Dialog Semiconductor

부품명 AT25SL641
상세설명  64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
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AT25SL641
DS-25SL641–113F–12/2018
8.
ElectricalCharacteristics
Notes:
1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. The “Absolute Maximum
Ratings” are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Voltage extremes referenced in the “Absolute Maximum Ratings” are intended to accommodate short duration undershoot/overshoot conditions
and does not imply or guarantee functional device operation at these levels for any extended period of time.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions
on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
8.1
Operating Ranges
8.2
Endurance and Data Retention
Table 8-1.
Absolute Maximum Ratings(1)
Parameter
Symbol
Conditions
Range
Unit
Supply Voltage
VCC
-0.6 to VCC+0.4
V
Voltage Applied to Any Pin
VIO
Relative to Ground
-0.6 to VCC +0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
-1.0V to VCC +1.0V
V
Storage Temperature
TSTG
-65
to +150
˚C
Lead Temperature
TLEAD
See Note(2)
˚C
Electrostatic Discharge Voltage
VESD
Human
Body Model(3)
-2000 to +2000
V
Table 8-2.
Device Operating Rate
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
VCC
f
R = 133 MHz (Single/Dual/Quad SPI)
fR = 50 MHz (Read Data 03h)
1.7
2.0
V
Ambient Operating
Temperature
TA
Industrial
-40
+85
˚C
Table 8-3.
Endurance and Data Retention
Parameter
Condition
Min
Max
Unit
Erase/Program Cycles
4KB block, 32/64KB block or full chip
100,000
Cycles
Data Retention
Full temperature range
20
Years



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