AFSC5G35E38T2 datasheet(5/16 Pages) NXP

5 / 16 page

AFSC5G35E38

RF Device Data

NXP Semiconductors

Table 6. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Typ

Range

Unit

Carrier Stage 1 — On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID =1.2 Adc)

VGS(th)

1.2

0.4

Vdc

Gate Quiescent Voltage

(VDS =30 Vdc, IDQ1A =12 mAdc)

VGS(Q)

1.9

0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD =30 Vdc, IDQ1A = 12 mAdc, Measured in Functional Test)

VGG(Q)

5.0

1.4

Vdc

Carrier Stage 2 — On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID = 12.8 Adc)

VGS(th)

1.2

0.4

Vdc

Gate Quiescent Voltage

(VDS =30 Vdc, IDQ2A =47 mAdc)

VGS(Q)

1.8

0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD =30 Vdc, IDQ2A = 47 mAdc, Measured in Functional Test)

VGG(Q)

2.8

1.2

Vdc

Peaking Stage 1 — On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID =1.6 Adc)

VGS(th)

1.2

0.4

Vdc

Gate Quiescent Voltage

(VDS =30 Vdc, IDQ1A =1.7 Adc)

VGS(Q)

1.2

0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD =30 Vdc, IDQ1A =1.7 Adc, Measured in Functional Test)

VGG(Q)

1.2

0.4

Vdc

Peaking Stage 2 — On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 27.2 Adc)

VGS(th)

1.2

0.4

Vdc

Gate Quiescent Voltage

(VDS =30 Vdc, IDQ2A =1.3 Adc)

VGS(Q)

1.2

0.4

Vdc

Fixture Gate Quiescent Voltage

(VDD =30 Vdc, IDQ2A =1.3 Adc, Measured in Functional Test)

VGG(Q)

1.2

0.4

Vdc

1. Each side of device measured separately.

(continued)

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