NXP Semiconductors

SL3S1205_15

UCODE 8/8m

10 Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to

RFN. [1] [2]

Symbol

Parameter

Conditions

Min

Max

Unit

Bare die limitations

storage temperature

-55

+125

°C

ambient temperature

-40

+85

°C

electrostatic discharge

voltage

Human body model

[3] [4] -

± 2

kV

Pad limitations

input power

maximum power

dissipation, RF1/RF2

pad

-

100

mW

Table 14. Limiting values

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any conditions other than those described in the

Operating Conditions and Electrical Characteristics section of this specification is not implied.

[2]

This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of

excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater

than the rated maxima.

[3]

For ESD measurement, the die chip has been mounted into a CDIP20 package.

[4]

HBM: ANSI/ESDA/JEDEC JS-001

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe

precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,

JESD625-A or equivalent standards.

SL3S1205_15

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2021. All rights reserved.

Product data sheet

Rev. 3.5 — 1 April 2021

COMPANY PUBLIC

398435

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