SS52 A / B / C -SS510 A / B / C

Document Number:F41806G

09-Aug-21 V 2.1

www.futurewafer.com.tw

Schottky Barrier Diode

Maximum Ratings@25°C Unless Otherwise Specified

Parameter

Symbol

Value

Units

SS54A/B/C SS56A/B/C SS510A/B/C

Peak Reverse Current

40

60

100

V

Reverse Current

Average Forward Current

5

A

Non-Repetitive Peak Forward Current

(tp≤8.3ms)

120

Operating Temperature

°C

-55 ~ +150

Storage Temperature

Maximum Ratings@25°C Unless Otherwise Specified

Parameter

Symbol

Condition

Value

Units

SS54A/B/C SS56A/B/C SS510A/B/C

Reverse Leakage Current

0.5

mA

10

Forward Voltage

0.50

0.70

0.85

V

4. Absolute Maximum Ratings

2. Feature List

●

High Surge Current Capability

●

Low Power Loss, High Efficiency

●

Highly Stable Oxide Passivated Junction

●

Low Forward Voltage Drop

3. Mechanical Characteristics

●

Mold JEDEC Package

- SMAJ/SMBJ/SMCJ

●

Packing: Tape and Reel

●

Flammability Rating UL 94V-0

●

Halogen Free

●

JEDEC MSL Classification :Level 1

1. General Description

These Devices Employ The Schottky Barrier Principle in a

Metal−to−Silicon Power Rectifier. Features Epitaxial

Construction With Oxide Passivation and Metal Overlay

Contact. Ideally Suited For Low Voltage, High Frequency

Switching Power Supplies; Free Wheeling Diodes and

Polarity Protection Diodes.

SMBJ

SMAJ

SMCJ