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MSCSM170TAM23CTPAG 데이터시트(PDF) 2 Page - Microchip Technology |
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MSCSM170TAM23CTPAG 데이터시트(HTML) 2 Page - Microchip Technology |
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2 / 17 page ![]() Features The following are key features of the MSCSM170TAM23CTPAG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Very low stray inductance • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM170TAM23CTPAG device: • High power and efficiency converters and inverters • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals for power and signal for easy mounting of PCB • Low profile • RoHS compliant Application The MSCSM170TAM23CTPAG device is designed for the following applications: • Welding converters • Switched mode power supplies • Uninterruptible power supplies • EV motor and traction drive MSCSM170TAM23CTPAG © 2021 Microchip Technology Inc. Datasheet DS00003965A-page 2 |
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