MSCSM170TAM23CTPAG datasheet(4/17 Pages) MICROCHIP

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The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM170TAM23CTPAG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDS = 1000 V

f = 1 MHz

—

6600

—

Coss

Output capacitance

—

300

—

Crss

Reverse transfer

capacitance

—

Total gate charge

VGS = –5 V/20 V

VBus = 850 V

ID = 60 A

—

356

—

Qgs

Gate-Source charge

—

Qgd

Gate-Drain charge

—

Td(on)

Turn-on delay time

TJ = 150 °C

VGS = –5 V/20 V

VBus = 900 V

ID = 100 A

RG(on) = 2.4 Ω

RG(off) = 1.4 Ω

—

Rise time

—

Td(off)

Turn-off delay time

—

Fall time

—

Eon

Turn-on energy

VGS = –5 V/20 V

VBus = 900 V

ID = 100 A

RG(on) = 2.4 Ω

RG(off) = 1.4 Ω

TJ = 150 °C —

2.2

—

Eoff

Turn-off energy

TJ = 150 °C —

0.33

—

RGint

Internal gate resistance

—

2.93

—

RthJC

Junction-to-case thermal resistance

—

0.255

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the

MSCSM170TAM23CTPAG device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward voltage

VGS = 0 V; ISD = 60 A

—

3.7

—

VGS = –5 V; ISD = 60 A

—

3.9

—

trr

Reverse recovery time

ISD = 60 A; VGS = –5 V

VR = 900 V; diF/dt = 2000 A/µs

—

Qrr

Reverse recovery charge

—

1300

—

Irr

Reverse recovery current

—

MSCSM170TAM23CTPAG

Electrical Specifications

Datasheet

DS00003965A-page 4

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