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STM32F469AE 데이터시트(PDF) 107 Page - STMicroelectronics |
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STM32F469AE 데이터시트(HTML) 107 Page - STMicroelectronics |
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107 / 220 page ![]() DS11189 Rev 7 107/220 STM32F469xx Electrical characteristics 191 Figure 27. Typical VBAT current consumption (RTC ON / backup SRAM ON and LSE in Low drive mode) Table 31. Typical and maximum current consumption in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.3 V IDD_VBAT Backup domain supply current Backup SRAM ON, RTC ON and LSE oscillator in Low Power mode 1.431 1.577 1.825 1.9 12.0 24.0 µA Backup SRAM OFF, RTC ON and LSE oscillator in Low Power mode 0.720 0.849 1.060 1.1 7.0 13.9 Backup SRAM ON, RTC ON and LSE oscillator in High Drive mode 2.212 2.368 2.630 2.80 17.3 34.6 Backup SRAM OFF, RTC ON and LSE oscillator in High Drive mode 1.499 1.637 1.862 2.0 12.3 24.5 Backup SRAM ON, RTC and LSE OFF 0.710 0.720 0.760 0.8(3) 5.0 10.0(3) Backup SRAM OFF, RTC and LSE OFF 0.018 0.020 0.024 0.2(3) 2.0 4.0(3) 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Based on characterization, tested in production. 3. Based on test during characterization. 0 1 2 3 4 5 6 0 2040 6080 100 Temperature (°C) 1.65V 1.70V 1.80V 2.00V 2.40V 2.70V 3.00V 3.30V 3.60V |
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