STP45N60DM6 datasheet(1/15 Pages) STMICROELECTRONICS

부품명	STP45N60DM6

상세설명	N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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2

3

TO-247

1

2

3

TAB

TO-220

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STP45N60DM6

600 V

0.099 Ω

30 A

STW45N60DM6

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status links

STP45N60DM6

STW45N60DM6

Product summary

Order code

STP45N60DM6

Marking

45N60DM6

Package

TO-220

Packing

Tube

Order code

STW45N60DM6

Marking

45N60DM6

Package

TO-247

Packing

Tube

N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220

and TO-247 packages

STP45N60DM6, STW45N60DM6

Datasheet

DS11664 - Rev 3 - July 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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STP45N60DM6 데이터시트(PDF) 1 Page - STMicroelectronics

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