STP45N60DM6 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 15 A

0.085

0.099

Ω

1. Defined by design, not subject to production test

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz, VGS = 0 V

1920

Coss

Output capacitance

120

Crss

Reverse transfer capacitance

Coss eq. (1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

310

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

1.5

Ω

Total gate charge

VDD = 480 V, ID = 30 A, VGS = 0 to

10 V (see )Figure 16. Test circuit

for gate charge behavior

Qgs

Gate-source charge

Qgd

Gate-drain charge

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 15 A

RG = 4.7 Ω, VGS = 10 V

(see Figure 17. Test circuit for

inductive load switching and diode

recovery times) and

Figure 20. Switching time

waveform

Rise time

5.3

td(off)

Turn-off-delay time

Fall time

7.3

STP45N60DM6, STW45N60DM6

Electrical characteristics

DS11664 - Rev 3

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