STM32L011E4 datasheet(71/119 Pages) STMICROELECTRONICS

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DocID027973 Rev 5

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STM32L011x3/4

Electrical characteristics

Flash memory and data EEPROM

Table 43. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

VDD

Operating voltage

Read / Write / Erase

-1.65

3.6

tprog

Programming time for

word or half-page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during

the whole programming /

erase operation

TA = 25 °C, VDD = 3.6 V

500

700

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

Table 44. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results, not tested in production.

NCYC(2)

Cycling (erase / write)

Program memory

TA = -40°C to 105 °C

kcycles

Cycling (erase / write)

EEPROM data memory

100

Cycling (erase / write)

Program memory

TA = -40°C to 125 °C

0.2

Cycling (erase / write)

EEPROM data memory

tRET(2)

2. Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 100 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

Data retention (EEPROM data memory)

after 100 kcycles at TA = 105 °C

Data retention (program memory) after

200 cycles at TA = 125 °C

TRET = +125 °C

Data retention (EEPROM data memory)

after 2 kcycles at TA = 125 °C

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