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STM32L011D4P7 데이터시트(PDF) 58 Page - STMicroelectronics |
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STM32L011D4P7 데이터시트(HTML) 58 Page - STMicroelectronics |
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58 / 119 page ![]() Electrical characteristics STM32L011x3/4 58/119 DocID027973 Rev 5 Figure 16. IDD vs VDD, at TA= -40/25/55/ 85/105/125 °C, Low-power run mode, code running from RAM, Range 3, MSI (Range 0) at 64 KHz, 0 WS Table 28. Current consumption in Low-power Sleep mode Symbol Parameter Conditions Typ Max(1) Unit IDD (LP Sleep) Supply current in Low-power sleep mode All peripherals OFF, VDD from 1.65 V to 3.6 V MSI clock, 65 kHz fHCLK = 32 kHz Flash OFF TA = -40 °C to 25 °C 2.5(2) - µA MSI clock, 65 kHz fHCLK = 32 kHz Flash ON TA = -40 °C to 25 °C 13 19 TA = 85 °C 15.5 20 TA = 105 °C 17.5 22 TA = 125 °C 21 29 MSI clock, 65 kHz fHCLK = 65 kHz, Flash ON TA = -40 °C to 25 °C 13.5 19 TA = 85 °C 16 20 TA = 105 °C 18 22 TA = 125 °C 21.5 29 MSI clock, 131 kHz fHCLK = 131 kHz, Flash ON TA = -40 °C to 25 °C 15.5 21 TA = 55 °C 17 22 TA = 85 °C 18 23 TA = 105 °C 19.5 24 TA = 125 °C 23.5 31 1. Guaranteed by characterization results at 125 °C, not tested in production, unless otherwise specified. 2. As the CPU is in Sleep mode, the difference between the current consumption with Flash memory ON and OFF (nearly 12 µA) is the same whatever the clock frequency. |
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