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STM32F303X6 데이터시트(PDF) 101 Page - STMicroelectronics |
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STM32F303X6 데이터시트(HTML) 101 Page - STMicroelectronics |
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101 / 124 page ![]() DS9866 Rev 8 101/124 STM32F303x6/x8 Electrical characteristics 102 Figure 34. OPAMP voltage noise versus frequency en Voltage noise density @ 1KHz, Output loaded with 4 K Ω - 109 - @ 10KHz, Output loaded with 4 K Ω -43 - 1. Guaranteed by design, not tested in production. 2. The saturation voltage can also be limited by the Iload. 3. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 4. Mostly TTa I/O leakage, when used in analog mode. Table 67. Operational amplifier characteristics(1) (continued) Symbol Parameter Condition Min. Typ. Max. Unit nV Hz ----------- |
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