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SPC58EEX 데이터시트(PDF) 30 Page - STMicroelectronics

부품명 SPC58EEX
상세설명  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  154 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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SPC58EEX 데이터시트(HTML) 30 Page - STMicroelectronics

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Electrical characteristics
SPC58EEx, SPC58NEx
30/154
DS11646 Rev 4
Note:
When the device enters into standby mode, the LP pads have the input buffer switched-on.
As a consequence, if the pad input voltage VIN is VSS<VIN<VDD_HV, an additional
consumption can be measured in the VDD_HV domain. The highest consumption can be
seen around mid-range (VIN ~=VDD_HV/2), 2-3mA depending on process, voltage and
temperature.
This situation may occur if the PAD is used as a ADC input channel, and VSS<VIN<VDD_HV.
The applications should ensure that LP pads are always set to VDD_HV or VSS, to avoid
the extra consumption. Please refer to the device pinout IO definition excel file to identify the
low-power pads which also have an ADC function.
3.8.2
I/O output DC characteristics
Figure 4 provides description of output DC electrical characteristics.
4. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and
voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature.
Table 12. I/O pull-up/pull-down electrical characteristics
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
IWPU
CC
T
Weak pull-up
current
absolute value
VIN = 1.1 V(1)
——
130
μA
P
VIN = 0.69 *
VDD_HV_IO(2)
15
—
—
RWPU
CC
D
Weak Pull-up
resistance
VDD_HV_IO = 5.0 V ±
10%
33
—
93
K
Ω
IWPD
CC
T
Weak pull-
down current
absolute value
VIN = 0.69 *
VDD_HV_IO(1)
——
130
μA
P
VIN = 0.9 V(2)
15
—
—
RWPD
CC
D
Weak Pull-
down
resistance
VDD_HV_IO = 5.0 V ±
10%
29
—
60
K
Ω
1. Maximum current when forcing a change in the pin level opposite to the pull configuration.
2. Minimum current when keeping the same pin level state than the pull configuration.



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