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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32L010K4 데이터시트(PDF) 44 Page - STMicroelectronics |
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STM32L010K4 데이터시트(HTML) 44 Page - STMicroelectronics |
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44 / 91 page  Electrical characteristics STM32L010F4/K4 44/91 DS12323 Rev 3 Figure 9. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSI, 1 ws Table 20. Current consumption in Run mode vs code type, code with data processing running from Flash memory Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from Flash memory) Supply current in Run mode, code executed from Flash memory fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(1) Range 3, VCORE =1.2 V, VOS[1:0] = 11 Dhrystone 4 MHz 460 µA CoreMark 440 Fibonacci 330 while(1) 305 while(1), prefetch OFF 320 Range 1, VCORE = 1.8 V VOS[1:0] = 01 Dhrystone 32 MHz 5.4 mA CoreMark 4.9 Fibonacci 5 while(1) 4.35 while(1), prefetch OFF 3.7 1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). MSv48132V1 |
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