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MF4SAM3 데이터시트(PDF) 10 Page - NXP Semiconductors |
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MF4SAM3 데이터시트(HTML) 10 Page - NXP Semiconductors |
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10 / 31 page ![]() NXP Semiconductors MF4SAM3 MIFARE SAM AV3 secure access module MF4SAM3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product short data sheet Rev. 3.0 — 2 August 2019 COMPANY PUBLIC 561930 10 / 31 8 Static characteristics 8.1 Measurement conventions Testing measurements are performed at the contact pads of the device under test. All voltages are defined with respect to the ground contact pad VSS. All currents flowing into the Smart Card IC are considered positive. 8.2 Levels and currents Table 6. Electrical DC characteristics of Input/Output: IO1, IO2 and IO3 Conditions: VDD = 1.62 V to 5.5 V; VSS = 0 V; Tamb = -25 °C to +85 °C, unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VIH HIGH level input voltage 0.7 VDD - VDD + 0.3 V VIL LOW level input voltage -0.3 - 0.25 VDD V IIH HIGH level input current in "weak pull-up" input mode 0.7 VDD ≤ VI ≤ VDD; Test conditions for the maximum absolute value: IIH(max): VI = 0.7 VDD, VDD = VDD(max) of the respective supply voltage class A, B or C 0 - -20 μA IIL LOW level input current 0 V ≤ VI ≤ 0.3 VDD; Test conditions for the maximum absolute value: IIL(max): VI = 0 V, VDD = VDD(max) of the respective supply voltage class A, B or C - - -50 μA 0.3 VDD < VI ≤ VDD; Test conditions for the maximum absolute value: VI = 0.5 VDD, VDD = VDD(max) of the respective supply voltage class A, B or C [1] Class A - - -300 μA Class B - - -250 μA ITL HIGH-to-LOW transition input current (only in "quasi-bidirectional" mode) Class C - - -200 μA II Input current in "weak pull- up" input mode 0 V ≤ VI ≤ VDD; Test conditions for the maximum absolute value: II(max): VI = 0 V, VDD = VDD(max) of the respective supply voltage class A, B or C 0 - -50 μA |
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