전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

NTMTS0D7N06CL 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NTMTS0D7N06CL
상세설명  MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMTS0D7N06CL 데이터시트(HTML) 2 Page - ON Semiconductor

  NTMTS0D7N06CL Datasheet HTML 1Page - ON Semiconductor NTMTS0D7N06CL Datasheet HTML 2Page - ON Semiconductor NTMTS0D7N06CL Datasheet HTML 3Page - ON Semiconductor NTMTS0D7N06CL Datasheet HTML 4Page - ON Semiconductor NTMTS0D7N06CL Datasheet HTML 5Page - ON Semiconductor NTMTS0D7N06CL Datasheet HTML 6Page - ON Semiconductor NTMTS0D7N06CL Datasheet HTML 7Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
NTMTS0D7N06CL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA. ref to 25°C
16.8
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
10
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
2.5
V
Threshold Temperature Coefficient
VGS(TH)/TJ
ID = 250 mA. ref to 25°C
−5.63
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
0.52
0.68
mW
VGS = 4.5 V
ID = 50 A
0.69
0.90
Forward Transconductance
gFS
VDS =15 V, ID = 50 A
310
S
Gate Resistance
RG
TA = 25°C
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
16200
pF
Output Capacitance
COSS
8490
Reverse Transfer Capacitance
CRSS
270
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
103
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
225
Threshold Gate Charge
QG(TH)
VGS = 10 V, VDS = 30 V; ID = 50 A
21.6
Gate−to−Source Charge
QGS
36.5
Gate−to−Drain Charge
QGD
20.7
Plateau Voltage
VGP
2.46
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 30 V,
ID = 50 A, RG = 6 W
35.3
ns
Rise Time
tr
26.3
Turn−Off Delay Time
td(OFF)
263
Fall Time
tf
60.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.67
1.2
V
TJ = 125°C
0.59
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
115
ns
Charge Time
ta
70
Discharge Time
tb
45
Reverse Recovery Charge
QRR
307
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



Html Pages

1 2 3 4 5 6 7


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com