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M76DW52003BA 데이터시트(PDF) 21 Page - STMicroelectronics

부품명 M76DW52003BA
상세설명  32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
PDF  27 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M76DW52003BA 데이터시트(HTML) 21 Page - STMicroelectronics

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M76DW52003TA, M76DW52003BA
Table 9. SRAM Write AC Characteristics
Symbol
Alt
Parameter
SRAM
Unit
Min
Max
tAVAV
tWC
Write Cycle Time
70
ns
tAVE1L,
tAVE2H,
tAVWL,
tAVBL
tAS
Address Valid to Beginning of Write
0
ns
tAVE1H,
tAVE2L
tAW
Address Valid to Chip Enable 1 Low or Chip Enable 2
High
60
ns
tAVWH
tAW
Address Valid to Write Enable High
60
ns
tBLWH
tBLE1H
tBLE2L
tAVBH
tBW
UBS, LBS Valid to End of Write
60
ns
tBLBH
tBW
UBS, LBS Low to UBS, LBS High
60
ns
tDVE1H,
tDVE2L,
tDVWH
tDVBH
tDW
Input Valid to End of Write
30
ns
tE1HAX,
tE2LAX,
tWHAX
tBHAX
tWR
End of Write to Address Change
0
ns
tE1HDZ,
tE2LDZ,
tWHDZ
tBHDZ
tHD
Address Transition to End of Write
0
ns
tE1LE1H,
tE1LBH
tE1LWH
tCW1
Chip Enable 1 Low to End of Write
60
ns
tE2HE2L,
tE2HBH,
tE2HWH
tCW2
Chip Enable 2 High to End of Write
60
ns
tGHQZ
tGHZ
Output Enable High to Output Hi-Z
25
ns
tWHQX
tDH
Write Enable High to Input Transition
5
ns
tWLBH
tWP
Write Enable Low to UBS, LBS High
50
ns
tWLQZ
tWHZ
Write Enable Low to Output Hi-Z
25
ns
tWLWH
tWLE1H
tWLE2L
tWP
Write Enable Pulse Width
50
ns



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