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M76DW52003BA 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 M76DW52003BA
상세설명  32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
PDF  27 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M76DW52003BA 데이터시트(HTML) 4 Page - STMicroelectronics

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M76DW52003TA, M76DW52003BA
4/27
SUMMARY DESCRIPTION
The M76DW52003TA and M76DW52003BA are
low voltage Multiple Memory Products that com-
bine two memory devices; a 32 Mbit Dual Bank,
boot block Flash memory (M29DW323D(T/B)) and
a 4Mbit SRAM. This document should be read in
conjunction with the M29DW323D datasheet.
Recommended operating conditions do not allow
both the Flash and SRAM devices to be active at
the same time.
The
memory
is
offered
in
an
LFBGA73
(8 x 11.6mm, 0.8 mm pitch) package and is sup-
plied with all the bits erased (set to ‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI08712
21
A0-A20
EF
VCCF
M76DW52003TA
M76DW52003BA
G
VSS
W
RPF
E1S
E2S
UBS
LBS
VPP/WP
VCCS
DQ0-DQ14
15
DQ15A–1
RB
BYTE
A0-A17
Address Inputs common to the Flash
Memory and SRAM
A18-A20
Address Inputs for Flash Memory only
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
G
Output Enable Input
W
Write Enable Input
VCCF
Flash Power Supply
VPP/WP
VPP/Write Protect
VSS
Ground
VCCS
SRAM Power Supply
VSSS
SRAM Ground
NC
Not Connected Internally
Flash Memory Control Functions
EF
Chip Enable Input
RPF
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
SRAM Control Functions
E1S, E2S
Chip Enable Inputs
UBS
Upper Byte Enable Input
LBS
Lower Byte Enable Input



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