MPC5675KFF0VMS2R datasheet(86/147 Pages) NXP

86 / 147 page

MPC5675K Microcontroller Data Sheet, Rev. 9

Electrical characteristics

NXP Semiconductors

3.15.2

Read access timing

3.15.3

Write access timing

Retention CC Minimum data retention at

85 °C average ambient

temperature2

Blocks with 0–1,000

P/E cycles

—

years

Blocks with 1,001–10,000

P/E cycles

—

years

Blocks with 10,001–100,000

P/E cycles

—

years

1 Typical endurance is evaluated at 25 oC. Product qualification is performed to the minimum specification. For

additional information on the NXP definition of Typical Endurance, please refer to Engineering Bulletin EB619,

Typical Endurance for Nonvolatile Memory.

2 Ambient temperature averaged over duration of application, not to exceed product operating temperature range.

Table 28. Code flash read access timing

No.

Symbol

Parameter

Condition

Value

Unit

Max

1fREAD

CC Maximum frequency for Flash reading

(system clock frequency SYS_CLK)

4 wait states

MHz

3 wait states

MHz

Table 29. Data flash read access timing

No.

Symbol

Parameter

Condition

Value

Unit

Max

1fREAD

CC Maximum frequency for Flash reading

(system clock frequency SYS_CLK)

12 wait states

MHz

8 wait states

MHz

Table 30. Code flash write access timing

No.

Symbol

Parameter

Condition

Value

Unit

Max

1fWRITE

CC Maximum frequency for Flash writing

(system clock frequency SYS_CLK)

—

MHz

Table 27. Flash memory module life (continued)

No.

Symbol

Parameter

Condition

Value

Unit

Min

Typ1

Max

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