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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST25PF040C 데이터시트(PDF) 1 Page - Microchip Technology |
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SST25PF040C 데이터시트(HTML) 1 Page - Microchip Technology |
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1 / 47 page  2015-2022 Microchip Technology Inc. and its subsidiaries DS20005397F-page 1 SST25PF040C Features • Single Voltage Read and Write Operations - 2.3V-3.6V • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • High-Speed Clock Frequency -40 MHz • Dual Input/Output Support - Fast-Read Dual-Output Instruction (3BH) - Fast-Read Dual I/O Instruction (BBH) • Superior Reliability - Endurance: 100,000 Cycles - Greater than 20 years Data Retention • Ultra-Low Power Consumption: - Active Read current: 5 mA (typical) - Standby current: 5 µA (typical) - Power-down Mode Standby current: 3 µA (typical) • Flexible Erase Capability - Uniform 4-Kbyte sectors - Uniform 64-Kbyte overlay blocks • Page Program Mode - 256 bytes per Page • Fast Erase and Page Program: - Chip Erase Time: 250 ms (typical) - Sector Erase Time: 40 ms (typical) - Block Erase Time: 80 ms (typical) - Page Program Time: 4 ms/ 256 bytes (typical) • End-of-Write Detection - Software polling the BUSY bit in STATUS Register • Hold Pin (HOLD#) - Suspend a serial sequence without deselecting the device • Write Protection (WP#) - Enables/Disables the Lock-Down function of the STATUS register • Software Write Protection - Write protection through Block-Protection bits in STATUS register • Temperature Range - Industrial: -40°C to +85°C - Industrial Plus: -40°C to +105°C - Extended: -40°C to +125°C • Automotive AEC-Q100 Qualified • All devices are RoHS compliant Packages • 8-contact USON (2 mm x 3 mm) • 8-lead SOIC (150 mils) • 8-contact WDFN (5 mm x 6 mm) Product Description SST25PF040C is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 2.3V-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy con- sumed during any Erase or Program operation is less than alternative flash memory technologies. See Figure 2-1 for the pin assignments. 4-Mbit, 3.3V, SPI Serial Flash |
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