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NVTYS005N06CL 데이터시트(PDF) 2 Page - ON Semiconductor |
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NVTYS005N06CL 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() NVTYS005N06CL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V TJ = 25°C 10 mA TJ = 125°C 250 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 75 mA 1.2 2.2 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 50 A 4.4 5.3 mW VGS = 4.5 V, ID = 50 A 6.1 7.3 Forward Transconductance gFS VDS = 5 V, ID = 50 A 100 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 1890 pF Output Capacitance Coss 1060 Reverse Transfer Capacitance Crss 11 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 50 A 11.5 nC Threshold Gate Charge QG(TH) 2.7 nC Gate−to−Source Charge QGS 5.3 Gate−to−Drain Charge QGD 2.9 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V, ID = 50 A 25 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(on) VGS = 4.5 V, VDS = 48 V, ID = 50 A, RG = 2.5 W 15 ns Rise Time tr 9 Turn−Off Delay Time td(off) 19 Fall Time tf 8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.9 1.2 V TJ = 125°C 0.8 Reverse Recovery Time tRR VGS = 0 V, dlS/dt = 100 A/ms, IS = 50 A 43 ns Charge Time ta 14 Discharge Time tb 29 Reverse Recovery Charge QRR 32 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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