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NVTYS005N06CL 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NVTYS005N06CL
상세설명  MOSFET - Power, Single N-Channel 60 V, 5.3 m, 89 A
PDF  6 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
10
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 75 mA
1.2
2.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 50 A
4.4
5.3
mW
VGS = 4.5 V, ID = 50 A
6.1
7.3
Forward Transconductance
gFS
VDS = 5 V, ID = 50 A
100
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
1890
pF
Output Capacitance
Coss
1060
Reverse Transfer Capacitance
Crss
11
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V, ID = 50 A
11.5
nC
Threshold Gate Charge
QG(TH)
2.7
nC
Gate−to−Source Charge
QGS
5.3
Gate−to−Drain Charge
QGD
2.9
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 48 V, ID = 50 A
25
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(on)
VGS = 4.5 V, VDS = 48 V,
ID = 50 A, RG = 2.5 W
15
ns
Rise Time
tr
9
Turn−Off Delay Time
td(off)
19
Fall Time
tf
8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.9
1.2
V
TJ = 125°C
0.8
Reverse Recovery Time
tRR
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 50 A
43
ns
Charge Time
ta
14
Discharge Time
tb
29
Reverse Recovery Charge
QRR
32
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.



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