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ACE12322A 데이터시트(PDF) 3 Page - ACE Technology Co., LTD.

부품명 ACE12322A
상세설명  Dual N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE12322A 데이터시트(HTML) 3 Page - ACE Technology Co., LTD.

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ACE12322A
Dual N-Channel Enhancement Mode MOSFET
VER 1.1
3
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
0.4
1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
uA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
VDS=20V, VGS=0V, TJ=55℃
10
On-State Drain Current
ID(on)
VDS≦4.5V,VGS=5V
15
A
Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=4.0A
26
m
Ω
VGS=2.5V, ID=3.0A
35
VGS=1.8V, ID=2.0A
50
Forward Trans Conductance
gfs
VDS=5V, ID=-3.5A
10
S
Diode Forward Voltage
VSD
VGS=0V, IS=1A
1.0
V
Dynamic
Total Gate Charge
Qg
VDS=15V, VGS=4.5V, ID
≡4.0A
8.6
nC
Gate-Source Charge
Qgs
1.37
Gate-Drain Charge
Qgd
2.3
Input Capacitance
Ciss
VDS = 8V, f = 1MHz, VGS = 0V
575
pF
Output Capacitance
Coss
84
Reverse Transfer Capacitance
Crss
22
Turn-On Time
td(on)
VDD=10V, ID
≡3.0A,
RG=3.3
Ω, V
GEN=4.5V
5.2
ns
tr
34
Turn-Off Time
td(off)
23
tf
9.2



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