GSOT03 datasheet(4/10 Pages) VISHAY

4 / 10 page

GSOT03 to GSOT36

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Vishay Semiconductors

Rev. 2.8, 17-Apr-2019

Document Number: 85807

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)

With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and

pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is

between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and

pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.



As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode

becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The

clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance

and inductance) of the protection diode.



Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction

through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.

Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and

Asymmetrical (BiAs).

ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified) 

between pin 3 and pin 1

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse stand-off voltage

Max. reverse working voltage

VRWM

3.3

Reverse voltage

at IR = 100 μA

3.3

Reverse current

at VR = 3.3 V

100

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

44.6

5.5

Reverse clamping voltage

at IPP = 1 A

-5.7

7.5

at IPP = IPPM = 30 A

12.3

Forward clamping voltage

at IPP = 1 A

-1

1.2

at IPP = IPPM = 30 A

4.5

Capacitance

at VR = 0 V; f = 1 MHz

420

600

at VR = 1.6 V; f = 1 MHz

260

ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified) 

between pin 3 and pin 1

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

lines

Reverse stand-off voltage

Max. reverse working voltage

VRWM

Reverse voltage

at IR = 20 μA

Reverse current

at VR = 4 V

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

56.1

Reverse clamping voltage

at IPP = 1 A

-7.5

at IPP = IPPM = 30 A

11.2

14.3

Forward clamping voltage

at IPP = 1 A

-1

1.2

at IPP = IPPM = 30 A

4.5

Capacitance

at VR = 0 V; f = 1 MHz

310

450

at VR = 2 V; f = 1 MHz

200

20422

Ground

BiAs

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