AiT Semiconductor Inc.

www.ait-ic.com

B5817WS-B5819WS

SCHOTTKY DIODE

REVERSE VOLTAGE 20V TO 40V FORWARD CURRENT 1A

REV1.0

- JAN 2017 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol B5817WS B5818WS B5819WS

Unit

Non-Repetitive Peak Reverse Voltage

20

30

40

V

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

20

30

40

V

RMS Reverse Voltage

14

21

28

V

Average Rectified Output Current

1

A

Peak Forward Surge Current @ 8.3ms

20

A

Power Dissipation

250

mW

Thermal Resistance Junction to Ambient

500

°C/W

Storage Temperature

-65 ~+150

°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these o r any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Condition

Min

Max

Unit

Reverse Breakdown Voltage

B5817WS

20

-

V

B5818WS

30

B5819WS

40

Reverse Voltage Leakage Current

B5817WS

-

1

mA

B5818WS

B5819WS

Forward Voltage

B5817WS

-

0.45

0.75

V

B5818WS

-

0.55

0.875

B5819WS

-

0.6

0.9

Diode Capacitance

f=1MHz

-

120

pF