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STLJS050N12MCLL 데이터시트(PDF) 1 Page - ON Semiconductor |
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1 / 7 page ![]() © Semiconductor Components Industries, LLC, 2020 August, 2021 − Rev. 0 1 Publication Order Number: STLJS050N12MCLL/D MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench) 120 V, 50.6 m W, 4.5 A STLJS050N12MCLL Features • Shielded Gate MOSFET Technology • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI • Low Profile − 0.5 mm in MicroFET 2x2 mm • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC • Motor Drive MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 120 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) TA = 25°C ID 4.5 A Power Dissipation (Note 1) TA = 25°C PD 2.1 W Power Dissipation (Note 2) TA = 25°C PD 0.62 W Pulsed Drain Current (Note 3) TA = 25°C IDM 51 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 4 A) (Note 4) EAS 8.0 mJ Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance Junction−to−Ambient (Note 1) RqJA 60 °C/W Thermal Resistance Junction−to−Ambient (Note 2) RqJA 200 °C/W 1. Surface mounted on a FR−4 board using 1 in2 pad of 2 oz copper. 2. Surface mounted on a FR−4 board using the minimum recommended pad of 2 oz copper. 3. Pulsed ID please refer to Figure 11 SOA graph for more details. 4. EAS of 8 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 4 A, VDD = 120 V, VGS = 10 V. 5. ESD Rating: HBM = 250 V (Class 1A), CDM = 1500 V (Class C5). www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 120 V 50.6 mW @ 10 V 4.5 A UDFN6 (2 X 2) CASE 517DZ MARKING DIAGRAM (Note: Microdot may be in either location) N−CHANNEL MOSFET See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 70 mW @ 4.5 V 5L = Specific Device Code M = One Digit Date Code G = Pb−Free Package 5L MG G 175 mW @ 2.5 V |
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