STLJS050N12MCLL datasheet(2/7 Pages) ONSEMI

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STLJS050N12MCLL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

120

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = 250 mA, referenced to 25°C

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 96 V, TJ = 25°C

1.0

Gate−to−Source Leakage Current

IGSS

VGS = ±12 V, VDS = 0 V

±100

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 29 mA

0.5

1.0

1.5

Gate Threshold Temperature Coefficient

VGS(TH)/TJ

VGS = VDS, ID = 29 mA,

referenced to 25°C

−4.61

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 5 A, TJ = 25°C

43.6

50.6

VGS = 4.5 V, ID = 4 A, TJ = 25°C

52.5

VGS = 2.5 V, ID = 1.5 A, TJ = 25°C

175

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz

VDS = 60 V

552

Output Capacitance

COSS

184

Reverse Transfer Capacitance

CRSS

1.5

Gate−Resistance

1.1

3.0

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 60 V, ID = 5 A

8.8

4.5 V Gate Charge

QG(4.5V)

4.1

2.5 V Gate Charge

QG(2.5V)

2.3

Gate−to−Source Charge

QGS

1.1

Gate−to−Drain Charge

QGD

0.8

Output Charge

QOSS

VGS = 0 V, VDD = 60 V

Total Gate Charge Sync

QSYNC

VDS = 0 V, VGS = 0 ~ 10 V

8.3

RESISTIVE SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

td(on)

VGS = 10 V, VDS = 60 V,

ID = 5 A, RG = 6 W

3.4

Rise Time

2.8

Turn−Off Delay Time

td(off)

20.3

Fall Time

2.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 5 A, TJ = 25°C

0.87

1.2

Reverse Recovery Time

tRR

IF = 5 A, dIs/dt = 300 A/ms

Reverse Recovery Charge

QRR

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Pulse test: pulse width ≤ 300 ms, duty ratio ≤ 2%.

7. Switching characteristics are independent of operating junction temperature

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