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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RZ/T2M 데이터시트(PDF) 83 Page - Renesas Technology Corp |
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RZ/T2M 데이터시트(HTML) 83 Page - Renesas Technology Corp |
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83 / 127 page  CKIO tDACD tDACD Tr Tc4 A25 to A0 tAD1 tAD1 tCSD1 tRWD1 A12/A11*1 RD/WR# tCSD1 DACK*2 Tc1 Tc2 tRWD1 D31 to D0 tBSD BS# tBSD Row address Column address tAD1 tAD1 tAD1 WRIT command CS3#, CS2# RAS# tRASD1 tRASD1 tCASD1 CAS# tCASD1 DQMUU, DQMUL, DQMLU, DQMLL tDQMD1 tDQMD1 (High) CKE Tc3 tAD1 tAD1 tAD1 tAD1 tWDH2 tWDD2 tRWD1 tWDH2 tWDD2 tRASD1 tRASD1 tRWD1 tAD1 Tpw Tp Note 1. Address pin to be connected to A10 of SDRAM. Note 2. DACK is waveform when active-low is specified. Figure 2.32 Synchronous DRAM burst-write bus cycle (write for 4 cycles) (bank active mode: PRE + ACT + WRITE command, different row address, WTRCD = 0 cycles, TRWL = 0 cycles) RZ/T2M Datasheet 2. Electrical Characteristics R01DS0383EJ0100 Rev.1.00 Mar 22, 2022 Page 83 of 127 |
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