© 2004 California Micro Devices Corp. All rights reserved.

4

430 N. McCarthy Blvd., Milpitas, CA 95035-5112

▲ Tel: 408.263.3214

▲ Fax: 408.263.7846 ▲ www.calmicro.com

09/14/04

PACUSB-D1/D2/D3

Specifications (cont’d)

Note 1: Electrical operating characteristics guaranteed over standard operating conditions unless specified otherwise.

Note 2: Guaranteed by design and characterization.

Note 3: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.

Note 4: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus,

they do not require the high ESD protection levels provided for pins 4 and 5.

Note 5: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if

ESD is applied to pin 6, then the clamping voltage is measured at pin 1).

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R1

Resistance of R1 Resistor

(PACUSB-D2Y5/Y5R, -D2YB5/YB5R)

12

15

18

Ω

R1

Resistance of R1 Resistor

(PACUSB-D3Y5/Y5R, -D3YB5/YB5R)

17.6

22

26.4

Ω

R1

Resistance of R1 Resistor

(PACUSB-D1Y5/Y5R, -D1YB5/YB5R)

26.4

33

39.6

Ω

R2

Resistance of R2 Resistor

15

k

Ω

TCR

Temperature Coefficient of Resistance Note 1

+1300

ppm/

°C

C1

Capacitance of C1 Capacitor

0 VDC; 30 mVAC; 1MHz; 25°C

37.6

47

56.4

pF

2.5 VDC; 30 mVAC; 1MHz; 25°C

25.6

32

38.4

pF

Matching Tolerance of C1 Capacitors

1MHz; 25°C

+2%

Diode Leakage Current to GND

Measured at 3.3 VDC, 25°C

1

100

nA

Diode Reverse Bias Voltage

5.5

V

Signal Voltage:

Positive Clamp

Negative Clamp

5.6

-0.4

6.8

-0.8

9.0

-1.5

V

V

In-system ESD Withstand Voltage

MIL-STD-883D, Method 3015

(HBM)

IEC 61000-4-2 Contact Discharge

Pins 1, 3; Notes 2,3 and 4

Pins 4, 5; Notes 2 and 3

Pins 4, 5; Notes 2 and 3

+4

+20

+15

kV

kV

kV

Clamping voltage under ESD

discharge

MIL-STD-883D, Method 3015

+8kV; Notes 2 and 5

12

V

MIL-STD-883D, Method 3015 -

8kV; Notes 2 and 5

-7

V