LQFP100 datasheet(103/204 Pages) STMICROELECTRONICS

103 / 204 page

DS8626 Rev 9

103/203

STM32F405xx, STM32F407xx

Electrical characteristics

Figure 33. Typical application with a 32.768 kHz crystal

5.3.9

Internal clock source characteristics

The parameters given in Table 34 and Table 35 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 14.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

ai17531

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32F

32.768 kH z

resonator

Resonator with

integrated capacitors

Bias

controlled

gain

CL2

Table 34. HSI oscillator characteristics (1)

1. VDD = 3.3 V, PLL OFF, TA = –40 to 125 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

HSI user trimming step(2)

2. Guaranteed by design.

Accuracy of the HSI oscillator

TA = –40 to 105 °C(3)

3. Guaranteed by characterization.

–8

4.5

TA = –10 to 85 °C(3)

–4

TA = 25 °C(4)

4. Factory calibrated, parts not soldered.

–1

tsu(HSI)(2) HSI oscillator startup time

2.2

µs

IDD(HSI)(2)

HSI oscillator power

consumption

µA

Table 35. LSI oscillator characteristics (1)

1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI(2)

2. Guaranteed by characterization.

Frequency

kHz

tsu(LSI)(3)

3. Guaranteed by design.

LSI oscillator startup time

µs

IDD(LSI)(3)

LSI oscillator power consumption

0.4

0.6

µA

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