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LQFP100 데이터시트(PDF) 99 Page - STMicroelectronics |
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LQFP100 데이터시트(HTML) 99 Page - STMicroelectronics |
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99 / 204 page ![]() DS8626 Rev 9 99/203 STM32F405xx, STM32F407xx Electrical characteristics 5.3.8 External clock source characteristics High-speed external user clock generated from an external source The characteristics given in Table 30 result from tests performed using an high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 14. Table 29. Low-power mode wakeup timings Symbol Parameter Min(1) Typ(1) Max(1) Unit tWUSLEEP(2) Wakeup from Sleep mode - 5 - CPU clock cycle tWUSTOP(2) Wakeup from Stop mode (regulator in Run mode and Flash memory in Stop mode) -13 - µs Wakeup from Stop mode (regulator in low-power mode and Flash memory in Stop mode) -17 40 Wakeup from Stop mode (regulator in Run mode and Flash memory in Deep power-down mode) -105 - Wakeup from Stop mode (regulator in low-power mode and Flash memory in Deep power-down mode) -110 - tWUSTDBY(2)(3) Wakeup from Standby mode 260 375 480 µs 1. Guaranteed by characterization. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction. 3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively. Table 30. High-speed external user clock characteristics Symbol Parameter Conditions Min Typ Max Unit fHSE_ext External user clock source frequency(1) - 1- 50 MHz VHSEH OSC_IN input pin high level voltage 0.7VDD -VDD V VHSEL OSC_IN input pin low level voltage VSS -0.3VDD tw(HSE) tw(HSE) OSC_IN high or low time(1) 1. Guaranteed by design. 5- - ns tr(HSE) tf(HSE) OSC_IN rise or fall time(1) -- 10 Cin(HSE) OSC_IN input capacitance(1) -- 5 - pF DuCy(HSE) Duty cycle - 45 - 55 % IL OSC_IN Input leakage current VSS ≤ VIN ≤ VDD -- ±1 µA |
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