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PM8805 데이터시트(PDF) 16 Page - STMicroelectronics

부품명 PM8805
상세설명  IEEE 802.3bt PoE-PD interface with embedded dual active bridge
PDF  48 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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PM8805 데이터시트(HTML) 16 Page - STMicroelectronics

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Electrical specifications
PM8805
16/48
DS12813 Rev 2
Ron_det
Signature pull-down
resistance
Within signature range
100
200
Ω
IDD_ det
VDD supply current during
detection
VDD=8V
15
25
μA
Von_class
Classification enable
Measured between PoE inputs(1)
VDD rising
12.5
14.5
V
Voff_class
Classification turn-off
Measured between PoE inputs(1)
VDD rising
21.6
24.6
V
Vmark_th
Mark event threshold
Measured between PoE inputs(1)
VDD falling
10.1
12.1
V
Vrst_cls
Classification reset
threshold
Measured between PoE inputs(1)
VDD falling
4
5.2
6.4
V
Td_cls
Delay on classification event
current
VDD rising
3.0
3.3
3.7
ms
Vcls
CLSx voltage
Within classification range with 44mA
load
1.38
1.4
1.42
V
Icls
CLSx max. current capability
Within classification range with CLS
47
90
mA
Autoclass
Autoclass_thr
STBY Autoclass enable
threshold
VOB within classification range
0.4
0.5
0.6
V
Tcls_typ3
Timer on first cls finger
76
81
86
ms
MPS
Imps2P
MPS current per 2pair
Total input VDD current
10
11.5
13
mA
Imps4P
MPS current per 4pair
Total input VDD current
18
20
22
mA
Ton_mps3
MPS ON time (3% duty)
8
10
12
ms
Toff_mps3
MPS OFF time (3% duty)
250
275
300
ms
Ton_mps27
MPS ON time (27% duty)
75
85
95
ms
Toff_mps27
MPS OFF time (27% duty)
200
220
240
ms
Bias current VDD
IDD_cls
VDD supply current during
classification
VDD=20V, CLSx pins open
600
1500
μA
IDD_mark
VDD supply current during
mark event
VDD=8V
250
600
1000
μA
Hot swap MOSFET
Rdson_hs
MOSFET resistance
90
150
mΩ
Ictrls
CTRL current
Sourced by CTRL pin when
VOB-VOUT<1V
10
μA
Iinrush_low
Inrush current low value
Sourced by VOUT when VOB-
VOUT=55V
18
40
mA
Table 6. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit



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