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STL117N4LF7AG 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL117N4LF7AG 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() 1 2 3 4 PowerFLAT™ 5x6 AM15540v2 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on) max. ID STL117N4LF7AG 40 V 3.5 mΩ 119 A • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL117N4LF7AG Device summary Order code STL117N4LF7AG Marking 117N4LF7 Package PowerFLAT™ 5x6 Packing Tape and reel Automotive-grade N-channel 40 V, 2.5 mΩ typ., 119 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package STL117N4LF7AG Datasheet DS11591 - Rev 6 - June 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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