2SC5975 datasheet(7/18 Pages) RENESAS

부품명	2SC5975

상세설명	SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR

PDF	18 Pages

Scroll/Zoom	100%

제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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7 / 18 page

2SC5975

Rev.1.00, Jul.06.2004, page 7 of 17

Scale: 10 / div.

S11 Parameter vs. Frequency

S21 Parameter vs. Frequency

Scale: 0.1 / div.

S12 Parameter vs. Frequency

S22 Parameter vs. Frequency

0.1

0.2

0.3

0.4

0.5

Condition: VCE = 3 V , Zo = 50

Ω

100 to 5100 MHz (100 MHz step)

Condition: VCE = 3 V , Zo = 50

Ω

100 to 1000 MHz (100 MHz step)

1000 to 5100 MHz (200 MHz step)

IC = 5 mA

IC = 10 mA

IC = 20 mA

IC = 5 mA

IC = 10 mA

IC = 20 mA

Condition: VCE = 3 V , Zo = 50

Ω

100 to 5100 MHz (100 MHz step)

Condition: VCE = 3 V , Zo = 50

Ω

100 to 1000 MHz (100 MHz step)

1000 to 5100 MHz (200 MHz step)

IC = 5 mA

IC = 10 mA

IC = 20 mA

IC = 5 mA

IC = 10 mA

IC = 20 mA

–10

–5

–3

–2

–1.5

1.5

–1

–.8

–.6

–.4

–.2

1.5

–4

3 4

–10

–5

–3

–2

–1.5

1.5

–1

–.8

–.6

–.4

–.2

1.5

–4

3 4

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