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2SC5975 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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2SC5975 데이터시트(HTML) 1 Page - Renesas Technology Corp |
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1 / 18 page ![]() Rev.1.00, Jul.06.2004, page 1 of 17 2SC5975 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0381-0100Z Rev.1.00 Jul.06.2004 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz Outline MFPAK-4 1 4 3 2 1. Emitter 2. Collector 3. Emitter 4. Base WU- 1 2 3 4 Note: Marking is “WU-”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 4V Emitter to base voltage VEBO 1.5 V Collector current IC 35 mA Collector power dissipation Pc *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side ) |
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