DMC4047LSD

Document number: DS36206 Rev. 4 - 2

2 of 9

www.diodes.com

November 2013

© Diodes Incorporated

DMC4047LSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value_Q2

Value_Q1

Units

Drain-Source Voltage

VDSS

40

-40

V

Gate-Source Voltage

VGSS

±20

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

7.0

5.6

-5.1

-4.1

A

t<10s

TA = +25°C

TA = +70°C

ID

9.0

7.2

-6.5

-5.2

A

Maximum Body Diode Forward Current (Note 6)

IS

2.5

-2.5

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

70

-40

A

Avalanche Current (Notes 7) L = 0.1mH

IAR

20

20

A

Repetitive Avalanche Energy (Notes 7) L = 0.1mH

EAR

20

20

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.3

W

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

98

°C/W

t<10s

59

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.8

W

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

71

°C/W

t<10s

43

Thermal Resistance, Junction to Case (Note 6)

RθJC

11.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

40





V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS





1

µA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS





100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.4



2.4

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



15

24

mΩ

VGS = 10V, ID = 6A



20

32

VGS = 4.5V, ID = 5A

Diode Forward Voltage

VSD



0.7

1.0

V

VGS = 0V, IS = 1.0A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



1060



pF

VDS = 20V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



84



Reverse Transfer Capacitance

Crss



58



Gate Resistance

RG



1.6



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg



8.8



nC



VDS = 20V, ID = 8A

Total Gate Charge (VGS = 10V)

Qg



19.1



Gate-Source Charge

Qgs



3.0



Gate-Drain Charge

Qgd



2.5



Turn-On Delay Time

tD(on)



5.3



nS

VDD = 25V, RL = 2.5Ω

VGS = 10V, RG = 3Ω

Turn-On Rise Time

tr



7.1



Turn-Off Delay Time

tD(off)



15.1



Turn-Off Fall Time

tf



4.8



Body Diode Reverse Recovery Time

trr



10.5



nS

IF = 8A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr



4.15



nC

IF = 8A, di/dt = 100A/μs