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TC3567CFSG 데이터시트(PDF) 35 Page - Toshiba Semiconductor |
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TC3567CFSG 데이터시트(HTML) 35 Page - Toshiba Semiconductor |
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35 / 49 page ![]() TC3567CFSG-002 2018-04-06 35 5.2. Operating Conditions TC3567C can operate normally with proven quality under the operating ranges. Any diversion from the operating ranges may cause false operation. Thus, please make sure application design to comply these operating ranges. Table 5-2 Operating conditions (VSSA = VSSRFIO = VSSDC = VSSD = VSSX = 0 V) Items Symbols Ratings Units Min Typ. Max Power supply VBAT Operating Voltage1 (Note1) VBATopr1 1.79 3.00 3.60 V VBAT Operating Voltage2 (Note2) VBATopr2 1.90 3.00 3.60 V VDDIO Operating Voltage (Note3) VDDIOopr 1.80 3.00 3.60 V VDDIOFQ Output Voltage (Note3) VDDIOFQ — 1.7 — V VDDCORE Voltage (Note3) VDDCORE1/ VDDCORE2 — 1.2 — V RF frequency Fc 2400 — 2483.5 MHz Clock frequencies Reference clock Fck 25.99870 26.00000 26.00130 MHz Sleep clock fslclk 32.751616 32.768000 32.784384 kHz Ambient temp. Ta -40 +25 +85 °C Note1: The internal CPU powers on when the operating voltage rises to the minimum value of the VBAT operating voltage 1. However, please pay attention that the minimum voltage of the VBAT operating voltage 2 is required for the reading and writing operation of the flash ROM as indicated in the Note 2. Note2: For reading and writing operation to the flash ROM in the digital block, the power in the range of VBAT operating voltage 2 should be supplied. In the booting process, please release RESET after the voltage rises to the minimum value (1.9 V) because of accessing to the flash ROM to confirm the existence of applications. Moreover, in case of operating in the User-App mode or driving till the under voltage detection turns off the operation, please pay attention to the relation between R/W operation to the flash ROM and the voltage. Note3: Please refer to other documents (application note) for our connection examples. Please do not input external power supply and do connect external capacitors to VDDIOFQ because they are supplied by the internal LDO. |
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