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NAND01GR3B 데이터시트(PDF) 57 Page - STMicroelectronics |
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NAND01GR3B 데이터시트(HTML) 57 Page - STMicroelectronics |
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57 / 59 page ![]() 57/59 NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B PART NUMBERING Table 31. Ordering Information Scheme Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’. For further information on any aspect of this device, please contact your nearest ST Sales Office. Example: NAND02GR3B 2 A ZA 1 T Device Type NAND Flash Memory Density 512 = 512Mb 01G = 1Gb 02G = 2Gb 04G = 4Gb 08G = 8Gb Operating Voltage R = VDD = 1.7 to 1.95V W = VDD = 2.7 to 3.6V Bus Width 3 = x8 4 = x16 Family Identifier B = 2112 Bytes/ 1056 Word Page Device Options 2 = Chip Enable Don't Care Enabled 3 = Chip Enable Don't Care Enabled and Automatic Page 0 Read at Power-up Product Version A = First Version B= Second Version C= Third Version Package N = TSOP48 12 x 20mm (all devices) V = USOP48 12 x 17 x 0.65mm (512Mb and 1Gb devices) ZA = VFBGA63 9.5 x 12 x 1mm, 0.8mm pitch (512Mb and 1Gb devices) ZB = TFBGA63 9.5 x 12 x 1.2mm, 0.8mm pitch (2Gb Dual Die devices) ZC = LFBGA63 9.5 x 12 x 1.4mm, 0.8mm pitch (8Gb Quadruple Die devices) Temperature Range 1 = 0 to 70 °C 6 = –40 to 85 °C Option blank = Standard Packing T = Tape & Reel Packing E = Lead Free Package, Standard Packing F = Lead Free Package, Tape & Reel Packing |
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