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NAND01GR3B 데이터시트(PDF) 19 Page - STMicroelectronics |
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NAND01GR3B 데이터시트(HTML) 19 Page - STMicroelectronics |
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19 / 59 page ![]() 19/59 NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B DEVICE OPERATIONS The following section gives the details of the de- vice operations. Read Memory Array At Power-Up the device defaults to Read mode. To enter Read mode from another mode the Read command must be issued, see Table 10., Commands. Once a Read command is is- sued, subsequent consecutive Read commands only require the confirm command code (30h). Once a Read command is issued two types of op- erations are available: Random Read and Page Read. Random Read. Each time the Read command is issued the first read is Random Read. Page Read. After the first Random Read access, the page data (2112 Bytes or 1056 Words) is transferred to the Page Buffer in a time of tWHBH (refer to Table 25. for value). Once the transfer is complete the Ready/Busy signal goes High. The data can then be read out sequentially (from se- lected column address to last column address) by pulsing the Read Enable signal. The device can output random data in a page, in- stead of the consecutive sequential data, by issu- ing a Random Data Output command. The Random Data Output command can be used to skip some data during a sequential data output. The sequential operation can be resumed by changing the column address of the next data to be output, to the address which follows the Ran- dom Data Output command. The Random Data Output command can be is- sued as many times as required within a page. The Random Data Output command is not accept- ed during Cache Read operations. Figure 9. Read Operations Note: 1. Highest address depends on device density. CL E W AL R I/O RB 00h ai08657b Busy Command Code Data Output (sequentially) Address Input tBLBH1 30h Command Code |
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