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STL36DN6F7 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STL36DN6F7
상세설명  Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STL36DN6F7
Electrical ratings
DocID028259 Rev 3
3/15
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25 °C
33
A
ID(1)
Drain current (continuous) at TC = 100 °C
23
A
ID(2)
Drain current (continuous) at Tpcb = 25 °C
9
A
ID(2)
Drain current (continuous) at Tpcb =100°C
6.7
A
IDM(1)(3)
Drain current (pulsed)
132
A
IDM(2)(3)
Drain current (pulsed)
36
A
PTOT(1)
Total dissipation at TC = 25 °C
58
W
PTOT(2)
Total dissipation at Tpcb = 25°C
4.8
W
TJ
Operating junction temperature range
-55 to 175
°C
Tstg
Storage temperature range
Notes:
(1)This value is rated according to Rthj-c.
(2)The value is rated according to Rthj-pcb.
(3)Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction- case
2.6
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
31.3
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch2, 2oz Cu, t < 10 s.



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