STL36DN6F7 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STL36DN6F7

4/15

DocID028259 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

VDS = 60 V, VGS = 0 V

µA

IGSS

Gate-body leakage

current

VDS = 0 V ,VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 4.5 A

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 30 V, f = 1 MHz,

VGS = 0 V

420

Coss

Output capacitance

215

Crss

Reverse transfer capacitance

Total gate charge

VDD = 30 V, ID= 9 A

VGS = 0 to 10 V

(see Figure 14: "Test circuit

for gate charge behavior")

Qgs

Gate-source charge

2.3

Qgd

Gate-drain charge

2.1

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 4.5 A,

= 4.7 Ω, VGS = 10 V

(see Figure 13: "Test circuit

for resistive load switching

times" and Figure 18:

"Switching time waveform")

7.85

Rise time

3.25

td(off)

Turn-off delay time

12.1

Fall time

3.95

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

ISD = 9 A, VGS = 0 V

1.2

trr

Reverse recovery time

ID = 9 A, di/dt = 100 A/µs

VDD = 48 V

(see Figure 15: "Test circuit

for inductive load switching

and diode recovery times")

17.1

Qrr

Reverse recovery charge

6.67

IRRM

Reverse recovery current

0.8

Notes:

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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