STM32H753II datasheet(219/361 Pages) STMICROELECTRONICS

219 / 361 page

DS12117 Rev 8

219/360

STM32H753xI

Electrical characteristics (rev V)

318

Table 133. Typical and maximum current consumption in Sleep mode, LDO regulator

Symbol

Parameter

Conditions

fHCLK

(MHz)

Typ

Max(1)

Unit

Tj=25

°C

Tj=85

°C

Tj=105

°C

Tj=125

°C

IDD (Sleep)

Supply

current in

Sleep mode

All

peripherals

disabled

VOS0

480

50.7

96.3

253.4

366.1

400

43.4

87.8

245.5

357.9

VOS1

400

35.3

66.5

181.3

265.8

379.6

300

27.9

VOS2

300

24.6

47.3

139.1

207.3

300.4

200

18.8

VOS3

200

16.5

33.6

106.4

160.9

236.1

All

peripherals

enabled

VOS0

480

136.0

194.7

348.5

464.4

400

115.0

169.0

325.9

441.7

VOS1

400

97.7

138.2

251.3

338.4

456.4

300

74.9

VOS2

300

67.3

95.8

187.6

257.9

354.1

200

52.8

VOS3

200

47.1

69.3

141.4

197.7

275.1

1. Guaranteed by characterization results, unless otherwise specified.

Table 134. Typical and maximum current consumption in Standby

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

1.62 V 2.4 V

3 V

3.3 V

3 V

Backup

SRAM

RTC

and

LSE

Tj=25

°C

Tj=85

°C

Tj=105

°C

Tj=125

°C

IDD

(Standby)

Supply

current in

Standby

mode

OFF

1,92

1,95

2,06

2,16

µA

OFF

3,33

3,44

3,6

3,79

8.2

141

OFF

2,43

2,57

2,77

2,95

3,82

4,05

4,31

4,55

1. Guaranteed by characterization results, unless otherwise specified.

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