STM32H753II datasheet(232/361 Pages) STMICROELECTRONICS

232 / 361 page

Electrical characteristics (rev V)

STM32H753xI

232/360

DS12117 Rev 8

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for STM8AL/AF/S, STM32 MCUs and MPUs” available from the ST website

www.st.com.

Figure 73. Typical application with a 32.768 kHz crystal

1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

7.3.9

Internal clock source characteristics

The parameters given in Table 142 to Table 145 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 121: General

operating conditions.

48 MHz high-speed internal RC oscillator (HSI48)

ai17531c

STM32

OSC32_OUT

fHSE

CL1

32.768 kHz

resonator

Bias

controlled

gain

OSC32_IN

CL2

Resonator with

integrated capacitors

Table 142. HSI48 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI48

HSI48 frequency

VDD=3.3 V,

TJ=30 °C

47.5(1)

48.5(1) MHz

TRIM(2)

USER trimming step

0.175

USER TRIM

COVERAGE(3)

USER TRIMMING Coverage

± 32 steps

±4.79

±5.60

DuCy(HSI48)(2)

Duty Cycle

ACCHSI48_REL(3)(4)

Accuracy of the HSI48 oscillator over

temperature (factory calibrated)

TJ=-40 to 125 °C

–4.5

3.5

∆VDD(HSI48)(3)

HSI48 oscillator frequency drift with

VDD(5)

VDD=3 to 3.6 V

0.025

0.05

VDD=1.62 V to 3.6 V

0.05

0.1

tsu(HSI48)(2)

HSI48 oscillator start-up time

2.1

4.0

µs

IDD(HSI48)(2)

HSI48 oscillator power consumption

350

400

µA

NT jitter

Next transition jitter

Accumulated jitter on 28 cycles(6)

± 0.15

PT jitter

Paired transition jitter

Accumulated jitter on 56 cycles(6)

± 0.25

1. Guaranteed by test in production.

2. Guaranteed by design.

3. Guaranteed by characterization.

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