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STM32L010R8 데이터시트(PDF) 46 Page - STMicroelectronics

부품명 STM32L010R8
상세설명  Value line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0,64-Kbyte Flash memory, 8-Kbyte SRAM, 256-byte EEPROM, ADC
PDF  92 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32L010R8 데이터시트(HTML) 46 Page - STMicroelectronics

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Electrical characteristics
STM32L010K8 STM32L010R8
46/92
DS12325 Rev 3
Figure 10. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSE bypass, 1 ws
MSv48128V1
Table 21. Current consumption in Run mode, code with data processing running from RAM
Symbol
Parameter
Conditions
fHCLK
(MHz)
Typ
Max(1)
Unit
IDD (Run
from
RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
memory
switched OFF
fHSE = fHCLK up to 16 MHz,
included
fHSE = fHCLK/2 above 16 MHz
(PLL ON)(2)
Range 3,
VCORE =1.2 V,
VOS[1:0] = 11
1
135
170
µA
2
240
270
4
450
480
Range 2,
VCORE = 1.5 ,V,
VOS[1:0] = 10
4
0.52
0.6
mA
81
1.2
16
2
2.3
Range 1,
VCORE =1.8 V,
VOS[1:0] = 01
8
1.25
1.4
16
2.45
2.8
32
5.1
5.4
MSI clock
Range 3,
VCORE =1.2 V,
VOS[1:0] = 11
0.065
34.5
75
µA
0.524
83
120
4.2
485
540
IDD (Run
from
RAM)
Supply current in
Run mode, code
executed from
RAM, Flash
memory
switched OFF
HSI16 clock source (16 MHz)
Range 2,
VCORE =1.5 V,
VOS[1:0] = 10
16
2.1
2.3
mA
Range 1,
VCORE =1.8 V,
VOS[1:0] = 01
32
5.1
5.6
1. Guaranteed by characterization results at 85 °C, not tested in production, unless otherwise specified.



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