STM32L010R8 datasheet(47/92 Pages) STMICROELECTRONICS

47 / 92 page

DS12325 Rev 3

47/92

STM32L010K8 STM32L010R8

Electrical characteristics

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Table 22. Current consumption in Run mode vs code type, code with data processing

running from RAM(1)

Symbol

Parameter

Conditions

fHCLK

Typ

Unit

IDD (Run

from

RAM)

Supply current in

Run mode, code

executed from

RAM, Flash

memory switched

OFF

fHSE = fHCLK up to 16 MHz,

included,

fHSE = fHCLK/2 above 16 MHz

(PLL ON)(2)

Range 3

VCORE =1.2 V

VOS[1:0] = 11

Dhrystone

4 MHz

450

µA

CoreMark

575

Fibonacci

370

while(1)

340

Range 1

VCORE =1.8 V

VOS[1:0] = 01

Dhrystone

32 MHz

5.1

CoreMark

6.25

Fibonacci

4.4

while(1)

4.7

1. Guaranteed by characterization results, not tested in production, unless otherwise specified.

2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

Table 23. Current consumption in Sleep mode

Symbol

Parameter

Conditions

fHCLK

(MHz)

Typ

Max(1)

Unit

IDD

(Sleep)

Supply current

in Sleep

mode, Flash

memory OFF

fHSE = fHCLK up to 16 MHz

included,

fHSE = fHCLK/2 above 16

MHz (PLL ON)(2)

Range 3,

VCORE =1.2 V,

VOS[1:0] = 11

143

µA

272

120

130

180

Range 2,

VCORE =1.5 V,

VOS[1:0] = 10

160

210

305

370

590

710

Range 1,

VCORE =1.8 V,

VOS[1:0] = 01

370

430

715

860

1650

1900

MSI clock

Range 3,

VCORE =1.2 V,

VOS[1:0] = 11

0.065

0.524

31.5

4.2

140

210

HSI16 clock source (16

MHz)

Range 2,

VCORE =1.5 V,

VOS[1:0] = 10

665

830

Range 1,

VCORE =1.8 V,

VOS[1:0] = 01

1750

2100

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