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AP13P15GP 데이터시트(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP13P15GP 데이터시트(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 4 page ![]() Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 AP13P15GS/P Q VG -10V QGS QGD QG Charge 0 2 4 6 8 10 12 0 10203040 Q G , Total Gate Charge (nC) I D = -7A V DS = -120V 10 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 02 46 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =-5V 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC |
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